Study of AlN/GaN HEMTs

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The large polarization difference between AlN and GaN provides extremely high electron densities at the heterointerface covered by only 3-4 nm AlN barrier, which makes AlN/GaN heterojunction the... This description may be from another edition of this product.

Format:Paperback

Language:English

ISBN:3639336305

ISBN13:9783639336306

Release Date:March 2011

Publisher:VDM Verlag

Length:196 Pages

Weight:0.65 lbs.

Dimensions:0.5" x 6.0" x 9.0"

Related Subjects

Engineering Technology

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Study of AlN/GaN HEMTs

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