This 61-page handbook uses insight to explain how metal-oxide-semiconductor (MOS) field-effect transistors (FETs) block and conduct current in sub-threshold, weak inversion, and inversion. It describes how MOSFETs accumulate, deplete, and invert their channels and how they saturate their currents in sub-threshold and inversion. It also discusses body effect, how gate-channel oxide capacitance distributes across operating regions, and short-channel...