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Paperback Gan Transistor Modeling for RF and Power Electronics: Using the Asm-Hemt Model Book

ISBN: 0323998712

ISBN13: 9780323998710

Gan Transistor Modeling for RF and Power Electronics: Using the Asm-Hemt Model

The aim of GaN Transistor Modeling for RF and Power Electronics is to cover all aspects of characterization and modelling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects including trapping, self-heating, field plate effects...

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Format: Paperback

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Related Subjects

Engineering Technology

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